Non-volatile memory device and method of fabricating the same

ABSTRACT

A diode may be foamed within a molding layer on a substrate. A conductive buffer pattern having a greater planar area than the diode may be on the diode and molding layer. An electrode structure may be on the conductive buffer pattern. A data storage pattern may be on the electrode structure. One lateral surface of the conductive buffer pattern may be vertically aligned with one lateral surface of the electrode structure.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority under 35 U.S.C. §119 to Korean PatentApplication No. 10-2011-0107749 filed on Oct. 20, 2011, the disclosureof which is hereby incorporated by reference in its entirety.

BACKGROUND

1. Field

Embodiments of the inventive concept relate to a non-volatile memorydevice and a method of fabricating the same.

2. Description of Related Art

Proper operation of a memory device, such as a phase change randomaccess memory device (PRAM) may depend upon a good ohmic contact betweena switching device and an electrode of the memory device. A memorydevice including such a contact and method for forming it would behighly desirable.

SUMMARY

In exemplary embodiments in accordance with principles of inventiveconcepts, a non-volatile memory device may include an ohmic contactbetween a switching device and a lower electrode.

In accordance with exemplary embodiments in accordance with principlesof inventive concepts, a non-volatile memory device is provided thatincludes a diode on a substrate. A conductive buffer pattern is on thediode, having a greater planar surface than the diode. An electrodestructure is on the conductive buffer pattern. A data storage pattern ison the electrode structure. One lateral surface of the conductive bufferpattern is vertically aligned with one lateral surface of the electrodestructure.

In exemplary embodiments in accordance with principles of inventiveconcepts, the diode may have a cylindrical shape, and the conductivebuffer pattern may have a hexahedral shape.

In exemplary embodiments in accordance with principles of inventiveconcepts, a molding layer may be on the substrate and a diode may beformed within a contact hole configured to penetrate the molding layer,and the conductive buffer pattern may be on the molding layer. A bottomend of the conductive buffer pattern may extend into the contact hole.

In exemplary embodiments in accordance with principles of inventiveconcepts, the electrode structure may include a lower electrode, a firstspacer on a first lateral surface of the lower electrode, and a secondspacer on a second lateral surface of the lower electrode facing thefirst lateral surface of the lower electrode. The lower electrode mayinclude an upper part having a vertical height greater than a horizontalwidth, and a lower part having a horizontal width greater than avertical height. The first lateral surface of the lower electrode mayinclude a first lateral surface of the upper part and a first lateralsurface of the lower part. An inner lateral surface of the first spacermay contact the first lateral surface of the lower part and the firstlateral surface of the upper part, and an inner lateral surface of thesecond spacer may contact a top surface of the lower part and a secondlateral surface of the upper part facing the first lateral surface ofthe upper part.

In exemplary embodiments in accordance with principles of inventiveconcepts, the first lateral surface of the conductive buffer pattern maybe vertically aligned with an outer lateral surface of the second spacerand a second lateral surface of the lower part facing the first lateralsurface of the lower part. A second lateral surface of the conductivebuffer pattern facing the first lateral surface of the conductive bufferpattern may be vertically aligned with an outer lateral surface of thefirst spacer.

In exemplary embodiments in accordance with principles of inventiveconcepts, the data storage pattern may be interposed between the firstspacer and the second spacer. Lateral surfaces of the data storagepattern may be vertically aligned with the first and second lateralsurfaces of the upper part of the lower electrode.

In exemplary embodiments in accordance with principles of inventiveconcepts, the metal silicide pattern may be interposed between the diodeand the conductive buffer pattern. An upper electrode may be on the datastorage pattern.

In exemplary embodiments in accordance with principles of inventiveconcepts, a non-volatile memory device may include a molding layer on asubstrate. A switching device is positioned through the molding layer. Apair of insulating lines are on the molding layer, spaced apart andparallel to one another. A pair of insulating patterns are interposedbetween the insulating lines on the molding layer and spaced apart fromone another. A conductive buffer pattern is interposed between theinsulating lines and the insulating patterns and overlaps the switchingdevice. An electrode structure is on the conductive buffer pattern. Adata storage pattern is on the electrode structure. One lateral surfaceof the conductive buffer pattern is vertically aligned with one lateralsurface of the electrode structure.

In exemplary embodiments in accordance with principles of inventiveconcepts, bottom ends of the insulating lines and the insulatingpatterns may be formed lower than a top end of the molding layer. Bottomends of the insulating lines may be formed at a different level frombottom ends of the insulating patterns.

In exemplary embodiments in accordance with principles of inventiveconcepts, the top end of the molding layer may extend between theinsulating lines and the switching device, and extend between theinsulating patterns and the switching device. Top ends of the insulatinglines, the insulating patterns, and the electrode structure may bedisposed at substantially the same level. The insulating lines and theinsulating patterns may be in contact with lateral surfaces of theconductive buffer pattern and lateral surfaces of the electrodestructure. Lateral surfaces of the data storage pattern may be incontact with the insulating lines.

In exemplary embodiments in accordance with principles of inventiveconcepts, a non-volatile memory device comprises: a vertical diode in acontact hole within a molding layer atop a first memory access line; abuffer layer over the diode and molding layer; a bottom electrode overthe buffer layer; a data storage pattern in contact with the bottomelectrode on a bottom side and with a top electrode on a top side; and asecond memory access line in contact with the top electrode.

In exemplary embodiments in accordance with principles of inventiveconcepts, the buffer layer includes a plurality of layers.

In exemplary embodiments in accordance with principles of inventiveconcepts, the buffer layer has a surface area larger than the surfacearea of the top surface of the diode.

In exemplary embodiments in accordance with principles of inventiveconcepts, the data storage pattern includes phase change memorymaterial.

In exemplary embodiments in accordance with principles of inventiveconcepts, the phase change memory material is a chalcongenide material.

In exemplary embodiments in accordance with principles of inventiveconcepts, a non-volatile memory device may be formed by forming a diodein a contact hole within a molding layer atop a first memory accessline, such as a word line; forming a buffer layer over the diode andmolding layer; forming a bottom electrode over the buffer layer; forminga data storage pattern in contact with the bottom electrode on a bottomside and with a top electrode on a top side; and forming a second memoryaccess line, such as a bit line, in contact with the top electrode. Inexemplary embodiments in accordance with principles of inventiveconcepts, the buffer layer and top electrode structure may be patternedin the same process and the buffer layer may include a plurality oflayers, for example.

In exemplary embodiments in accordance with principles of inventiveconcepts, the buffer layer may be patterned to have a surface arealarger than the surface area of the top surface of the diode.

In exemplary embodiments in accordance with principles of inventiveconcepts, the data storage pattern may include phase change memorymaterial.

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing and other features and advantages of the inventiveconcepts will be apparent from the more particular description ofpreferred embodiments of the inventive concepts, as illustrated in theaccompanying drawings in which like reference characters refer to thesame parts throughout the different views. The drawings are notnecessarily to scale, emphasis instead being placed upon illustratingthe principles of the inventive concepts. In the drawings:

FIG. 1 is a perspective view of main components of a non-volatile memorydevice according to first embodiments of the inventive concept;

FIG. 2 is an exploded perspective view of the non-volatile memory deviceof FIG. 1, provided for clarity;

FIG. 3 is a layout illustrating the non-volatile memory device accordingto first embodiments of the inventive concept;

FIGS. 4 and 5 are cross-sectional views taken along lines I-I′ andII-II′ of FIG. 3;

FIGS. 6 through 9 are cross-sectional views of non-volatile memorydevices according to second embodiments of the inventive concept;

FIGS. 10 through 19, 21, 22, and 24 through 27 are cross-sectional viewstaken along lines I-I′ and II-II′ of FIG. 3, illustrating a method offabricating a non-volatile memory device according to third embodimentsof the inventive concept;

FIGS. 20 and 23 are top views of the method according to the thirdembodiments of the inventive concept;

FIGS. 28 through 32 are cross-sectional views taken along lines I-I′ andII-II ′ of FIG. 3, illustrating a method of fabricating a non-volatilememory device according to fourth embodiments of the inventive concept;

FIG. 33 is a block diagram of an electronic system according to fifthembodiments of the inventive concept; and

FIGS. 34 and 35 are respectively a perspective view and block diagram ofan electronic system according to sixth embodiments of the inventiveconcept.

DESCRIPTION

Exemplary embodiments in accordance with principles of inventiveconcepts will now be described more fully with reference to theaccompanying drawings, in which exemplary embodiments are shown.Exemplary embodiments in accordance with principles of inventiveconcepts may, however, be embodied in many different forms and shouldnot be construed as being limited to the embodiments set forth herein;rather, these embodiments are provided so that this disclosure will bethorough and complete, and will fully convey the concept of exemplaryembodiments to those of ordinary skill in the art. In the drawings, thethicknesses of layers and regions may be exaggerated for clarity. Likereference numerals in the drawings denote like elements, and thus theirdescription may not be repeated.

It will be understood that when an element is referred to as being“connected” or “coupled” to another element, it can be directlyconnected or coupled to the other element or intervening elements may bepresent. In contrast, when an element is referred to as being “directlyconnected” or “directly coupled” to another element, there are nointervening elements present. Like numbers indicate like elementsthroughout. As used herein the term “and/or” includes any and allcombinations of one or more of the associated listed items. Other wordsused to describe the relationship between elements or layers should beinterpreted in a like fashion (e.g., “between” versus “directlybetween,” “adjacent” versus “directly adjacent,” “on” versus “directlyon”).

It will be understood that, although the terms “first”, “second”, etc.may be used herein to describe various elements, components, regions,layers and/or sections, these elements, components, regions, layersand/or sections should not be limited by these terms. These terms areonly used to distinguish one element, component, region, layer orsection from another element, component, region, layer or section. Thus,a first element, component, region, layer or section discussed belowcould be termed a second element, component, region, layer or sectionwithout departing from the teachings of exemplary embodiments.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper” and the like, may be used herein for ease of description todescribe one element or feature's relationship to another element(s) orfeature(s) as illustrated in the figures. It will be understood that thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. For example, if the device in thefigures is turned over, elements described as “below” or “beneath” otherelements or features would then be oriented “above” the other elementsor features. Thus, the exemplary term “below” can encompass both anorientation of above and below. The device may be otherwise oriented(rotated 90 degrees or at other orientations) and the spatially relativedescriptors used herein interpreted accordingly.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of exemplaryembodiments. As used herein, the singular forms “a,” “an” and “the” areintended to include the plural forms as well, unless the context clearlyindicates otherwise. It will be further understood that the terms“comprises”, “comprising”, “includes” and/or “including,” if usedherein, specify the presence of stated features, integers, steps,operations, elements and/or components, but do not preclude the presenceor addition of one or more other features, integers, steps, operations,elements, components and/or groups thereof.

Exemplary embodiments in accordance with principles of inventiveconcepts are described herein with reference to cross-sectionalillustrations that are schematic illustrations of idealized embodiments(and intermediate structures) of exemplary embodiments. As such,variations from the shapes of the illustrations as a result, forexample, of manufacturing techniques and/or tolerances, are to beexpected. Thus, exemplary embodiments in accordance with principles ofinventive concepts should not be construed as limited to the particularshapes of regions illustrated herein but are to include deviations inshapes that result, for example, from manufacturing. For example, animplanted region illustrated as a rectangle may have rounded or curvedfeatures and/or a gradient of implant concentration at its edges ratherthan a binary change from implanted to non-implanted region. Likewise, aburied region formed by implantation may result in some implantation inthe region between the buried region and the surface through which theimplantation takes place. Thus, the regions illustrated in the figuresare schematic in nature and their shapes are not intended to illustratethe actual shape of a region of a device and are not intended to limitthe scope of exemplary embodiments.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which exemplary embodiments inaccordance with principles of inventive concepts belong. It will befurther understood that terms, such as those defined in commonly-useddictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art andwill not be interpreted in an idealized or overly formal sense unlessexpressly so defined herein.

Hereinafter, semiconductor devices and methods of fabricating the sameaccording to exemplary embodiments in accordance with principles ofinventive concepts will now be described more fully with reference tothe accompanying drawings.

Embodiment 1

FIG. 1 is a perspective view of components of a non-volatile memorydevice in accordance with a first exemplary embodiment in accordancewith principles of inventive concepts, FIG. 2 is an exploded perspectiveview of the non-volatile memory device of FIG. 1, provided for clarity,FIG. 3 is a layout illustrating the non-volatile memory device accordingto a first exemplary embodiment in accordance with principles ofinventive concepts, and FIGS. 4 and 5 are cross-sectional views takenalong lines I-I′ and II-II ′ of FIG. 3.

Referring to FIGS. 1 and 2, diode 33 may be formed on a word line 25.Diode 33 may include first semiconductor pattern 31 and secondsemiconductor pattern 32 stacked sequentially. A metal silicide pattern35 may be formed on the diode 33. A conductive buffer pattern 39 may beformed on the metal silicide pattern 35. The conductive buffer pattern39 may include a first conductive pattern 37 and a second conductivepattern 38 stacked sequentially. An electrode structure 41 may be formedon the conductive buffer pattern 39. The electrode structure 41 mayinclude a lower, or bottom, electrode 45, a first spacer 43 formed onone lateral surface of the lower electrode 45, and a second spacer 47formed on a lateral surface facing the one lateral surface of the lowerelectrode 45. A data storage pattern 63 may be formed on the lowerelectrode 45 and may include, for example, germanium-antimony-tellurium,also referred to herein as GeSbTe, or GST, material. An upper electrode65 may be formed on the data storage pattern 63. A bit line 75 may beformed on the upper electrode 65. The bit line 75 may include a barriermetal layer 71, a seed layer 72, and a conductive layer 73.

The metal silicide pattern 35 may be self-aligned on the diode 33, forexample. The metal silicide pattern 35 may have substantially the sameshape as the diode 33. The conductive buffer pattern 39 may have adifferent shape from the diode 33. For example, the conductive bufferpattern 39 may have a hexahedral shape, while the diode 33 may have acylindrical shape. The conductive buffer pattern 39 may have a greaterplanar area than the diode 33. The conductive buffer pattern 39 maycompletely cover the metal silicide pattern 35. Lateral surfaces of theelectrode structure 41 may be vertically aligned with lateral surfacesof the conductive buffer pattern 39. The data storage pattern 63 may beformed between the first and second spacers 43 and 47. The data storagepattern 63 may be self-aligned on the lower electrode 45.

As will be described in greater detail in the discussion related toFIGs. below, the conductive buffer pattern may be formed in one or morelayers atop diode 33 and metal silicide pattern 35, which may besequentially formed within a contact hole, and a molding layer, thenlater patterned. Rather than forming a W plug within a diode hole, aprocess that increases in difficulty as feature sizes diminish, anon-volatile memory device in accordance with principles of inventiveconcepts may form a conductive buffer pattern atop a layer that includesthe top of a diode (and metal silicide 35) and molding layer 29. Whencompared to a process of forming a W plug within a diode hole, theformation of the conductive buffer pattern 39 in accordance withprinciples of inventive concepts may not only drastically reducedefects, such as seam defects that might be introduced into a W plug,but may also reduce the aspect ratio of a contact hole required for thediode 33, thereby improving manufacturability. Furthermore, as describedin greater detail below, the conductive buffer patterns 39 may becontinuously formed during a patterning process for forming theelectrode structures 41, also improving manufacturability. As comparedwith a an approach such as forming a W pad and a lower electrodeseparately, the formation of the conductive buffer pattern 39 inaccordance with principles of inventive concepts may simplify the entireprocess and also prevent alignment errors. As a result, a non-volatilememory device in accordance with principles of inventive concepts may bereadily manufacturable and may provide superior performance.

Referring to FIG. 3, word lines 25 may be formed in a cell array regionof the non-volatile memory device and may be parallel to one another.Upper electrodes 65 may be formed over and across the word lines 25. Bitlines 75 may be formed on the upper electrodes 65. Diodes 33, conductivebuffer patterns 39, lower electrodes 45, and data storage patterns 63may be formed at intersections between the word lines 25 and the bitlines 75.

Referring to FIGS. 3 and 4, an isolation layer 23 defining activeregions 22 may be formed in predetermined regions of a substrate 21. Theword lines 25 may be formed within the active regions 22. A moldinglayer 29 may be formed on the word lines 25 and the isolation layer 23.Contact holes 29H may be formed through the molding layer 29. A firstsemiconductor pattern 31, a second semiconductor pattern 32, and a metalsilicide pattern 35 may be sequentially stacked within each of thecontact holes 29H. The first and second semiconductor patterns 31 and 32may constitute the diode 33. Top surfaces of the metal silicide patterns35 and the molding layer 29 may be formed at substantially the samelevel. The diodes 33 and the metal silicide patterns 35 may completelyfill the contact holes 29H.

Insulating lines 53 may be formed on the molding layer 29 and separatedfrom one another. The insulating lines 53 may have bar shapes parallelto one another. Insulating patterns 49 may be formed between theinsulating lines 53 on the molding layer 29 and separated from oneanother. Conductive buffer patterns 39 may be formed between theinsulating patterns 49 and overlap the metal silicide patterns 35.Electrode structures 41 may be formed on the conductive buffer patterns39 between the insulating patterns 49. Each of the electrode structures41 may include the lower electrode 45, the first spacer 43 disposed onthe one lateral surface of the lower electrode 45, and the second spacer47 formed on the lateral surface facing the one lateral surface of thelower electrode 45. The lower electrode 45 may include an upper part 45Ahaving a vertical height greater than a horizontal width thereof, and alower part 45B having a horizontal width greater than a vertical heightthereof. For example, the lower electrode 45 may have an L shape.

The insulating patterns 49 may intersect the insulating lines 53 atright angles. Bottoms of the insulating patterns 49 may be formed lowerthan top ends of the metal silicide patterns 35. The molding layer 29may be interposed between the insulating patterns 49 and the metalsilicide patterns 35. Additionally, the bottoms of the insulatingpatterns 49 may be formed lower than top ends of the secondsemiconductor patterns 32. In such a case, the molding layer 29 may beinterposed between the insulating patterns 49 and the secondsemiconductor patterns 32.

Lateral surfaces of the conductive buffer patterns 39 and the electrodestructures 41 may be in contact with the insulating patterns 49. Lateralsurfaces of the electrode structures 41 may be vertically aligned withthe lateral surfaces of the conductive buffer patterns 39. The secondspacer 47 may contact a top surface of the lower part 45B of the lowerelectrode 45, and contact one lateral surface of the upper part 45Bthereof. In an exemplary embodiment in accordance with principles ofinventive concepts, one lateral surface of the second spacer 47, onelateral surface of the lower part 45B, and one lateral surface of theconductive buffer pattern 39 may be vertically aligned with one another.In such a case, one lateral surface of each of the insulating patterns49 may contact the second spacer 47, the lower part 45B, and theconductive buffer pattern 39.

The first spacer 43 may contact a lateral surface facing the one lateralsurface of the upper part 45A, a lateral surface facing the one lateralsurface of the lower part 45B, and a top surface of the conductivebuffer pattern 39. One lateral surface of the first spacer 43 may bevertically aligned with a lateral surface of the conductive bufferpattern 39 facing the one lateral surface of the conductive bufferpattern 39. In such a case, the insulating patterns 49 may contact thefirst spacers 43 and the conductive buffer patterns 39.

Bottoms of the insulating lines 53 may also be formed lower than the topends of the metal silicide patterns 35. The molding layer 29 may beinterposed between the insulating lines 53 and the metal silicidepatterns 35. Additionally, the bottoms of the insulating lines 53 may beformed lower than the top ends of the second semiconductor patterns 32.In such a case, the molding layer 29 may be interposed between theinsulating lines 53 and the second semiconductor patterns 32.Furthermore, the bottoms of the insulating lines 53 may be formed at adifferent level from the bottoms of the insulating patterns 49. Forexample, in exemplary embodiments in accordance with principles ofinventive concepts, the bottoms of the insulating lines 53 may be formedlower than the bottoms of the insulating patterns 49. The lateralsurfaces of the conductive buffer patterns 39 and the lateral surfacesof the electrode structures 41 may contact the insulating lines 53.Lateral surfaces of the lower electrodes 45 may also contact theinsulating lines 53. Top ends of the insulating lines 53, the insulatingpatterns 49, and the electrode structures 41 may be formed atsubstantially the same level.

The data storage patterns 63 may be formed on the upper parts 45A of thelower electrodes 45. Each of the data storage patterns 63 may be formedbetween the first spacer 43 and the second spacer 47. Each of the datastorage patterns 63 may be self-aligned on the upper part 45A of thelower electrode 45. Lateral surfaces of the data storage patterns 63 maybe vertically aligned with lateral surfaces of the upper parts 45Athereof. Top ends of the data storage patterns 63 may be formed atsubstantially the same level as top ends of the first and second spacers43 and 47. Each of the data storage patterns 63 may be surrounded withthe insulating lines 53 and the first and second spacers 43 and 47.

The upper electrodes 65 may be formed on the data storage patterns 63.An upper insulating layer 67 may be formed on the insulating lines 53,the insulating patterns 49, and the upper electrodes 65. The bit lines75 may be formed to penetrate the upper insulating layer 67 and contactthe upper electrodes 65. Each of the bit lines 75 may include thebarrier metal layer 71, the seed layer 72, and the conductive layer 73stacked sequentially.

Referring to FIG. 5, each of the conductive buffer patterns 39A may havea trapezoidal shape having a lower width greater than an upper widththereof. In other exemplary embodiments in accordance with principles ofinventive concepts, each of the conductive buffer patterns 39A may havean inverse trapezoidal shape having an upper width greater than a lowerwidth thereof.

Embodiment 2

FIGS. 6 through 9 are cross-sectional views of non-volatile memorydevices according to a second exemplary embodiment in accordance withprinciples of inventive concepts.

Referring to FIG. 6, a central axis of a conductive buffer pattern 39may deviate from a central axis of a contact hole 29H. In such a case,the central axis of the conductive buffer pattern 39 may deviate from acentral axis of the diode 33. The conductive buffer pattern 39 may havea greater horizontal width than the contact hole 29H. The conductivebuffer pattern 39 may completely cover a metal silicide pattern 35.

Referring to FIG. 7, a top end of the metal silicide pattern 35 may beformed lower than a top end of a molding layer 29. A bottom end of afirst conductive pattern 37 may extend into the contact hole 29H. Asecond conductive pattern 38 may be formed on the first conductivepattern 37. The first and second conductive patterns 37 and 38 mayconstitute a conductive buffer pattern 39. The central axis of theconductive buffer pattern 39 may deviate from the central axis of thediode 33. An electrode structure 41 may be self-aligned on theconductive buffer pattern 39.

Referring to FIG. 8, an interlayer insulating layer 61 may be formed onthe electrode structure 41, insulating lines 53, and insulating patterns49. Data storage patterns 63A may be formed through the interlayerinsulating layer 61 over and across the lower electrodes 45. The datastorage patterns 63A may have line shapes parallel to one another. Upperelectrodes 65 may be fanned on the data storage patterns 63A.

Referring to FIG. 9, data storage patterns 63B may be formed through theinterlayer insulating layer 61A over and across the lower electrodes 45.The data storage patterns 63B may have bar shapes.

Embodiment 3

FIGS. 10 through 19, 21, 22, and 24 through 27 are cross-sectional viewstaken along lines I-I′ and II-II′ of FIG. 3, illustrating a method offabricating a non-volatile memory device according to a third exemplaryembodiment in accordance with principles of inventive concepts, andFIGS. 20 and 23 are top views illustrating a method in accordance withprinciples of inventive concepts. The layout, top views, andcross-sectional views of FIGS. 3 and 10 through 27 may correspond to acell region of a PRAM, for example.

Referring to FIGS. 3 and 10, an isolation layer 23 defining activeregions 22 may be formed in predetermined regions of a substrate 21.Word lines 25 may be formed within the active regions 22. The word lines25 may be parallel to one another. The isolation layer 23 may be foamedbetween the word lines 25.

The substrate 21 may be a semiconductor substrate, such as asingle-crystalline silicon wafer or a silicon-on-insulator (SOI) wafer,for example. Hereinafter, for descriptive purposes, it is assumed thatthe substrate 21 is a silicon wafer containing p-type impurity ions. Theisolation layer 23 may be formed using a shallow trench isolation (STI)technique. The isolation layer 23 may include silicon oxide, siliconnitride, silicon oxynitride, or a combination thereof, for example. Theword lines 25 may be formed by implanting n-type impurity ions into theactive regions 22.

In other exemplary embodiments in accordance with principles ofinventive concepts, although the word lines 25 may be conductivepatterns formed on the substrate 21, a detailed description of the wordlines 25 will be omitted for brevity.

Referring to FIGS. 3 and 11, a molding layer 29 may be formed on thesubstrate 21 having the word lines 25. Contact holes 29H may be formedthrough the molding layer 29 and expose the word lines 25. The contactholes 29H may be aligned at predetermined intervals along the word lines25. The contact holes 29H may be separated from one another. Each of thecontact hole 29H may have an aspect ratio of 10:1 or higher, forexample.

The molding layer 29 may include silicon oxide, silicon nitride, siliconoxynitride, or a combination thereof, for example. The molding layer 29may cover the word lines 25 and the isolation layer 23. Although an etchstop layer may, additionally, be formed between the word lines 25 andthe molding layer 29, a description thereof will be omitted for brevity.The contact holes 29H may be formed using a patterning technique. Forexample, the formation of the contact holes 29H may be performed usingphotolithography and anisotropic etching processes. Each of the contactholes 29H may have one of various shapes, such as a circular shape, atetragonal shape, or a tetragonal shape having round corners. Each ofthe contact holes 29H may have a smaller width than each of the wordlines 25.

Referring to FIGS. 3 and 12, a first semiconductor pattern 31 and asecond semiconductor pattern 32 may be sequentially formed within eachof the contact holes 29H. The first and second semiconductor patterns 31and 32 may constitute a diode 33. A top surface of the secondsemiconductor pattern 32 may be planarized using a chemical mechanicalpolishing (CMP) and/or an etchback process, for example. In such a case,top ends of the diode 33 and the molding layer 29 may be formed at thesame level. The diode 33 may serve as a switching device.

The first and second semiconductor patterns 31 and 32 may be formedusing a selective epitaxial growth (SEG) technique, for example. Thefirst semiconductor pattern 31 may be fanned between the secondsemiconductor pattern 32 and the word lines 25. The first semiconductorpattern 31 may include a silicon layer containing n-type impurity ions.The semiconductor pattern 32 may include a silicon layer containingp-type impurity ions.

In other embodiments, the first and second semiconductor patterns 31 and32 may be stacked in the reverse order. In other embodiments, the firstsemiconductor pattern 31 may be omitted.

Referring to FIGS. 3 and 13, a metal silicide pattern 35 may be formedon the diode 33. The metal silicide pattern 35 may be in contact withthe second semiconductor pattern 32. A top surface of the metal silicidepattern 35 may be formed at the same level as a top surface of themolding layer 29. The metal silicide pattern 35 may include cobaltsilicide (CoSi), nickel silicide (NiSi), tungsten silicide (WSi),titanium silicide (TiSi), or tantalum silicide (TaSi), for example. Inan exemplary embodiment in accordance with principles of inventiveconcepts, the metal silicide pattern 35 may be formed of a CoSi layer.

Referring to FIGS. 3 and 14, a first conductive layer 37L and a secondconductive layer 38L may be sequentially formed on the metal silicidepattern 35 and the molding layer 29. The first conductive layer 37L maycontact the metal silicide pattern 35 and cover the molding layer 29.Sacrificial patterns 42 may be formed on the second conductive layer38L. Each of the sacrificial patterns 42 may have a bar shape. Thesacrificial patterns 42 may be formed using a thin-film forming processand a patterning process, for example. In an exemplary embodiment inaccordance with principles of inventive concepts, the patterning processmay include a photolithography process.

Each of the first and second conductive layers 37L and 38L may includeTi, titanium nitride (TiN), titanium-aluminum-nitride (TiAlN), titaniumcarbon nitride (TiCN), TiSiN, titanium oxynitride (TiON), Ta, TaN,TaAlN, TaCN, TaSiN, C, CN, CoSi, CoSiN, W, WN, WSi, WSiN, Ni, or acombination thereof, for example. In an exemplary embodiment inaccordance with principles of inventive concepts, the first conductivelayer 37L may include a barrier metal layer, such as a Ti/TiN layer, andthe second conductive layer 38L may include a W layer.

Referring to FIGS. 3 and 15, a first spacer layer 43L may be formed onthe entire surface of the substrate 21. The first spacer layer 43L maycover top and lateral surfaces of the sacrificial pattern 42, and coverthe second conductive layer 38L, for example. The first spacer layer 43Lmay be anisotropically etched until the sacrificial pattern 42 and thesecond conductive layer 38L are exposed, thereby forming first spacers43 on lateral surfaces of the sacrificial pattern 42. A horizontal widthof the first spacers 43 may depend on a deposited thickness of the firstspacer layer 43L.

The first spacers 43 may include a material having an etch selectivitywith respect to the sacrificial pattern 42 and the molding layer 29. Forexample, in an exemplary embodiment in accordance with principles ofinventive concepts, the sacrificial pattern 42 may include siliconoxide, while the first spacers 43 may include silicon nitride.

Referring to FIGS. 3 and 16, a lower electrode layer 45L and a secondspacer layer 47L may be sequentially stacked on the substrate 21 havingthe sacrificial pattern 42 and the first spacers 43. The lower electrodelayer 45L may cover lateral surfaces of the first spacers 43 and contactthe second conductive layer 38L. The second spacer layer 47L may coverthe lower electrode layer 45L.

The lower electrode layer 45L may include Ti, TiN, TiAlN, TiCN, TiSiN,TiON, Ta, TaN, TaAlN, TaCN, TaSiN, C, CN, CoSi, CoSiN, W, WN, WSi, WSiN,Ni, or a combination thereof. The second spacer layer 47L may include amaterial having an etch selectivity with respect to the sacrificialpattern 42 and the molding layer 29. For example, in an exemplaryembodiment in accordance with principles of inventive concepts, thesecond spacer layer 47L may include silicon nitride.

Referring to FIGS. 3 and 17, the second spacer layer 47L may beanisotropically etched until the lower electrode layer 45L is exposed,thereby forming second spacers 47. A horizontal width of the secondspacers 47 may depend on a deposited thickness of the second spacerlayer 47L. Thereafter, the exposed lower electrode layer 45L may beremoved to expose the second conductive layer 38L. As a result, thelower electrode layer 45L may be retained between the first and secondspacers 43 and 47. Also, the lower electrode layer 45L may be retainedbetween the second conductive layer 38L and the second spacer 47. Topsurfaces of the sacrificial pattern 42 and the first spacers 43 may beexposed.

Referring to FIGS. 3 and 18, the sacrificial pattern 42 may be removedto expose the second conductive layer 38L.

Referring to FIGS. 3 and 19, the second conductive layer 38L, the firstconductive layer 37L, and the molding layer 29 may be anisotropicallyetched using the first spacers 43, the lower electrode layer 45L, andthe second spacers 47 as an etch mask, thereby forming first grooves49G. A bottom surface of the first groove 49G may be formed lower than atop end of the molding layer 29 by a first depth d1. The bottom surfaceof the first groove 49G may be formed lower than the metal silicidepattern 35. Furthermore, the bottom surface of the first groove 49G maybe formed lower than a top end of the diode 33. In such a case, themolding layer 29 may be retained between the first groove 49G and thediode 33.

Referring to FIGS. 3, 20, and 21, the lower electrode layer 45L may havea line shape from a top view. Insulating patterns 49 may be formed tofill the first grooves 49G. The insulating patterns 49 may be formedusing a thin-film forming process and a planarization process. Theinsulating patterns 49 may include silicon oxide, silicon nitride,silicon oxynitride, or a combination thereof. For example, in exemplaryembodiments in accordance with principles of inventive concepts, theinsulating patterns 49 may include silicon nitride.

Referring to FIGS. 3 and 22, a mask pattern 51 may be formed on theinsulating patterns 49, the first spacers 43, the lower electrode layer45L, and the second spacers 47. The mask pattern 51 may be formed overand across the insulating patterns 49, the first spacers 43, the lowerelectrode layer 45L, and the second spacers 47. The mask pattern 51 mayintersect the insulating patterns 49, the first spacers 43, the lowerelectrode layer 45L, and the second spacers 47 at right angles. The maskpattern 51 may be formed using a photolithography process, for example.

The insulating patterns 49, the first spacers 43, the lower electrodelayer 45L, the second spacers 47, the second conductive layer 38L, thefirst conductive layer 37L, and the molding layer 29 may beanisotropically etched using the mask pattern 51 as an etch mask,thereby forming second grooves 52G and conductive buffer patterns 39.The second grooves 52G may intersect the first grooves 49G at rightangles. A bottom surface of the second groove 52G may be formed lowerthan the top end of the molding layer 29 by as much as a second depthd2. The second depth d2 may differ from the first depth d1. The seconddepth d2 may be greater than the first depth d1. The bottom surface ofthe second groove 52G may be formed lower than the metal silicidepattern 35. Furthermore, the bottom surface of the second groove 52G maybe formed lower than the top end of the diode 33. In such a case, themolding layer 29 may be retained between the second groove 52G and thediode 33.

The lower electrode layer 45L may be partially removed to form aplurality of lower electrodes 45. Each of the lower electrodes 45 may beretained between the first and second spacers 43 and 47. The lowerelectrode 45 and the first and second spacers 43 and 47 may constitutean electrode structure 41.

Each of the conductive buffer patterns 39 may include a first conductivepattern 37 and a second conductive pattern 38 stacked sequentially. Theconductive buffer pattern 39 may, for example, be self-aligned with theelectrode structure 41. Lateral surfaces of the conductive bufferpattern 39 may be vertically aligned with lateral surfaces of theelectrode structure 41.

Referring to FIGS. 3, 23, and 24, insulating lines 53 may be formed tofill the second grooves 52G The formation of the insulating lines 53 maybe performed using a thin-film forming process and a planarizationprocess, for example. Top surfaces of the insulating lines 53, theelectrode structures 41, and the insulating patterns 49 may be exposedon substantially the same plane surface. The insulating lines 53 may beparallel to one another. The insulating lines 53 may intersect theinsulating patterns 49 at right angles. The insulating patterns 49 maybe retained between the insulating lines 53. The insulating lines 53 mayinclude silicon oxide, silicon nitride, silicon oxynitride, or acombination thereof. For example, the insulating lines 53 may includesilicon nitride.

As shown in FIG. 23, each of the lower electrodes 45 may have a dashshape. The lower electrode 45 may be retained between the first andsecond spacers 43 and 47. The electrode structure 41 may be interposedbetween the insulating patterns 49. The electrode structure 41 and theinsulating patterns 49 may, for example, be interposed between theinsulating lines 53.

During the formation of the insulating lines 53, the mask pattern 51 maybe removed. In other exemplary embodiments in accordance with principlesof inventive concepts, the mask pattern 51 may be removed before theinsulating lines 53 are formed.

Referring to FIGS. 3 and 25, the lower electrodes 45 may be partiallyremoved to form trenches 55T. The partial removal of the lowerelectrodes 45 may include an etchback process, for example. The lowerelectrodes 45 may be retained at a level lower than top ends of thefirst and second spacers 43 and 47. The trenches 55T may be confinedbetween the first spacers 43 and the second spacers 47. The insulatinglines 53, the first spacers 43, and the second spacers 47 may be exposedby sidewalls of the trenches 55T.

Referring to FIGS. 3 and 26, data storage patterns 63 may be formed tofill the trenches 55T. The formation of the data storage patterns 63 maybe performed using thin-film forming and planarization processes, forexample. The data storage patterns 63 may be self-aligned on the lowerelectrodes 45. At least one lateral surface of each of the data storagepatterns 63 may be vertically aligned on one lateral surface of thecorresponding one of the lower electrodes 45.

Each of the data storage patterns 63 may include a phase-change plug, apolymer plug, a nanoparticle plug, or a resistance-change plug, forexample. In an exemplary embodiment in accordance with principles ofinventive concepts, for example, the resistance-change plug may includea SrTiO₃ layer. Also, when each of the data storage patterns 63 includesa phase-change plug, the phase-change plug may includegermanium-antimony-telluride (GeSbTe), germanium-tellurium-arsenide(GeTeAs), tin-tellurium-tin (SnTeSn), GeTe, SbTe, selenium-tellurium-tin(SeTeSn), GeTeSe, antimony-selenium-bismuth (SbSeBi), GeBiTe, GeTeTi,indium-selenium (InSe), GaTeSe, or InSbTe, for example. Furthermore, thephase-change plugs may include a material layer obtained by adding oneselected from the group consisting of carbon (C), nitrogen (N), Si, andoxygen (O) to one selected from the group consisting of a GeSbTe layer,a GeTeAs layer, a SnTeSn layer, a GeTe layer, a SbTe layer, a SeTeSnlayer, a GeTeSe layer, a SbSeBi layer, a GeBiTe layer, a GeTeTi layer,an InSe layer, a GaTeSe layer, and an InSbTe layer, for example.

Referring to FIGS. 3 and 27, upper electrodes 65 may be formed on thedata storage patterns 63. The upper electrodes 65 may intersect the wordlines 25 at right angles. The upper electrodes 65 may have a greaterwidth than the data storage patterns 63. The upper electrodes 65 may bein contact with the data storage patterns 63. The upper electrodes 65may include W, WN, WSi, WSiN, Ti, TiN, TiAlN, TiCN, TiSiN, TiON, Ta,TaN, TaAlN, TaCN, TaSiN, C, CN, CoSi, CoSiN, Ni, for example, or acombination thereof.

Referring back to FIGS. 3 and 4, an upper insulating layer 67 may beformed to cover the upper electrodes 65. Bit lines 75 may be formed topenetrate the upper insulating layer 67 and contact the upper electrodes65. Each of the bit lines 75 may include a barrier metal layer 71, aseed layer 72, and a conductive layer 73 stacked sequentially.

The upper insulating layer 67 may include silicon oxide, siliconnitride, or silicon oxynitride, for example. The barrier metal layer 71may include Ti, TiN, or Ti/TiN. The seed layer 72 may include W, WN,WSi, WSiN, Ti, TiN, TiAlN, TiCN, TiSiN, TiON, Ta, TaN, TaAlN, TaCN,TaSiN, C, CN, CoSi, CoSiN, Ni, Al, Cu, or a combination thereof. Theconductive layer 73 may include W, WN, WSi, WSiN, Ti, TiN, TiAlN, TiCN,TiSiN, TiON, Ta, TaN, TaAlN, TaCN, TaSiN, C, CN, CoSi, CoSiN, Ni, Al,Cu, or a combination thereof.

In exemplary embodiments in accordance with principles of inventiveconcepts, the conductive buffer pattern 39 may be formed on the moldinglayer 29 and connected to the diode 33. Rather than forming a W plugwithin a diode hole, a process that increases in difficulty as featuresizes diminish, a non-volatile memory device in accordance withprinciples of inventive concepts may form a conductive buffer patternatop a layer that includes the top of a diode and molding layer 29. Whencompared to a process of forming a W plug within a diode hole, theformation of the conductive buffer pattern 39 in accordance withprinciples of inventive concepts may not only drastically reducedefects, such as seam defects that might be introduced into a W plug,but may also reduce the aspect ratio of the contact hole 29H requiredfor the diode 33, thereby improving manufacturability. Furthermore, theconductive buffer patterns 39 may be continuously formed during apatterning process for forming the electrode structures 41, alsoimproving manufacturability. As compared with a an approach such asforming a W pad and a lower electrode separately, the formation of theconductive buffer pattern 39 in accordance with principles of inventiveconcepts may simplify the entire process and also prevent alignmenterrors. As a result, a non-volatile memory device in accordance withprinciples of inventive concepts may be readily manufacturable and mayprovide superior performance.

Embodiment 4

FIGS. 28 through 32 are cross-sectional views taken along lines I-I′ andII-II′ of FIG. 3, illustrating a method of fabricating a non-volatilememory device according to a fourth exemplary embodiment in accordancewith principles of inventive concepts.

Referring to FIGS. 3 and 28, a first semiconductor pattern 31 and asecond semiconductor pattern 32 may be sequentially formed within eachof the contact holes 29H. The first and second semiconductor patterns 31and 32 may constitute a diode 33. A top surface of the secondsemiconductor pattern 32 may be planarized using a CMP process and/or anetchback process, for example. Subsequently, the second semiconductorpattern 32 may be etched back and recessed downward. In such a case, atop end of the second semiconductor pattern 32 may be formed lower thana top end of a molding layer 29.

Referring to FIGS. 3 and 29, a metal silicide pattern 35 may be formedon the diode 33. The metal silicide pattern 35 may be in contact withthe second semiconductor pattern 32. A top end of the metal silicidepattern 35 may be formed lower than the top end of the molding layer 29.

A first conductive layer 37L and a second conductive layer 38L may besequentially formed on the metal silicide pattern 35 and the moldinglayer 29. The first conductive layer 37L may contact the metal silicidepattern 35 and cover the molding layer 29. A bottom end of the firstconductive layer 37L may extend into the contact hole 29H. A bottomsurface of the first conductive layer 37L may be formed lower than thetop end of the molding layer 29. Sacrificial patterns 42 may be formedon the second conductive layer 38L.

Referring to FIGS. 3 and 30, the second conductive layer 38L, the firstconductive layer 37L, and the molding layer 29 may be anisotropicallyetched using first spacers 43, a lower electrode layer 45L, and secondspacers 47 as an etch mask, thereby forming first grooves 49G

Referring to FIGS. 3 and 31, a mask pattern 51 may be formed oninsulating patterns 49, the first spacers 43, the lower electrode layer45L, and the second spacers 47. The insulating patterns 49, the firstspacers 43, the lower electrode layer 45L, the second spacers 47, thesecond conductive layer 38L, the first conductive layer 37L, and themolding layer 29 may be anisotropically etched using the mask patterns51 as an etch mask, thereby forming second grooves 52G and conductivebuffer patterns 39.

The lower electrode layer 45L may be partially removed to form aplurality of lower electrodes 45. Each of the lower electrodes 45 may beretained between the first and second spacers 43 and 47. The lowerelectrode 45 and the first and second spacers 43 and 47 may constitutean electrode structure 41.

In accordance with principles of inventive concepts, each of theconductive buffer patterns 39 may include a first conductive pattern 37and a second conductive pattern 38 stacked sequentially. The conductivebuffer pattern 39 may be self-aligned with the electrode structure 41,for example. Lateral surfaces of the conductive buffer pattern 39 may bevertically aligned with lateral surfaces of the electrode structure 41.A central axis of the conductive buffer pattern 39 may deviate from acentral axis of the contact hole 29H. That is, in exemplary embodimentsin accordance with principle of inventive concepts, the central axis ofthe conductive buffer pattern 39 may deviate from a central axis of thediode 33.

Referring to FIGS. 3 and 32, insulating lines 53 may be formed to fillthe second grooves 52G. Data storage patterns 63 may be formed betweenthe first spacers 43 and the second spacers 47. Upper electrodes 65 maybe formed on the data storage patterns 63.

Referring to FIGS. 3 and 7, an upper insulating layer 67 may be formedto cover the upper electrodes 65. Bit lines 75 may be formed topenetrate the upper insulating layer 67 and contact the upper electrodes65. Each of the bit lines 75 may include a barrier metal layer 71, aseed layer 72, and a conductive layer 73 stacked sequentially.

FIG. 33 is a block diagram of an electronic system that may employ anon-volatile memory in accordance with principles of inventive concepts.The electronic system may be, or may include, a data storage device,such as a solid-state disk (SSD) 1100, for example.

Referring to FIG. 33, the SSD 1100 may include an interface 1113, acontroller 1115, a non-volatile memory 1118, and a buffer memory 1119.

The SSD 1100 may be a device configured to store information using asemiconductor device such as a non-volatile memory in accordance withprinciples of inventive concepts. As compared with a hard disk drive(HDD), the SSD 1100 may operate with higher access speed, reducedmechanical delay, reduced failure rate, reduced heat generation, andlower noise, and may be more compact and lighter-weight. The SSD 1100may be widely used for laptop personal computers (laptop PCs), desktopPCs, MP3 players, or portable storage devices, for example.

The controller 1115 may be formed adjacent to and electrically connectedto the interface 1113. The controller 1115 may be a microprocessor (MP),including a memory controller and a buffer controller. The non-volatilememory 1118 may be formed adjacent to and electrically connected to thecontroller 1115. The SSD 1100 may have a rated data capacitycorresponding to the capacity of non-volatile memory 1118. The buffermemory 1119 may be formed adjacent to and electrically connected to thecontroller 1115.

The interface 1113 may be connected to a host 1002 and may serve totransmit and receive electric signals, such as data. For example, theinterface 1113 may be an apparatus using a standard, such as serialadvanced technology attachment (SATA), integrated drive electronics(IDE), small computer system interface (SCSI), and/or a combinationthereof, for example. The non-volatile memory 1118 may be connected tothe interface 1113 through the controller 1115. The non-volatile memory1118 may function to store data received through the interface 1113.

The buffer memory 1119 may include a volatile memory device such as adynamic random access memory (DRAM) and/or a static random access memory(SRAM), for example. The buffer memory 1119 may operate at higher speedthan the non-volatile memory device 1118.

Data processing speed of the interface 1113 may be higher than operationspeed of the non-volatile memory device 1118. In such a case, the buffermemory 1119 may function to temporarily store data. After data receivedthrough the interface 1113 is temporarily stored in the buffer memory1119 through the controller 1115, the received data may be permanentlystored in the non-volatile memory 1118 at a data write speed of thenon-volatile memory 1118. Additionally, among data stored in thenon-volatile memory 1118, frequently used data may be previously readand temporarily stored in the buffer memory 1119. That is, the buffermemory 1119 may function to increase effective operating speed of theSSD 1100 and reduce error rate.

The non-volatile memory 1118 may include a non-volatile memory device inaccordance with principles of inventive concepts, such as described inthe discussion related to previous figures herein. For example, thenon-volatile memory device 1118 may include memory cells, ofsubstantially the same configuration as shown in FIG. 1. In this case,the non-volatile memory 1118 may exhibit superior electrical properties,due, at least in part, to the configurations of the diodes 33, theconductive buffer patterns 39, and the electrode structures 41, forexample. Thus, performance of an SSD 1100 employing a non-volatilememory device in accordance with principles of inventive concepts may bemarkedly better than an SSD not employing a non-volatile memory devicein accordance with principles of inventive concepts.

FIGS. 34 and 35 are respectively a perspective view and block diagram ofan electronic system such as may employ a non-volatile memory device inaccordance with principles of inventive concepts.

Referring to FIG. 34, a non-volatile memory device in accordance withprinciples of inventive concepts may be effectively applied toelectronic systems, such as a portable phone 1900, a netbook, a laptopcomputer, or a tablet PC. For example, a non-volatile memory device inaccordance with principles of inventive concepts may be mounted on amain board of the portable phone 1900. Furthermore, such a non-volatilememory device may be provided to an expansion device, such as anexternal memory card, and combined with the portable phone 1900.

Referring to FIG. 35, such a non-volatile memory device may be appliedto, or employed by, an electronic system 2100. The electronic system2100 may include a body 2110, an MP unit 2120, a power unit 2130, afunction unit 2140, and a display controller unit 2150. The body 2110may include a mother board including a printed circuit board (PCB). TheMP unit 2120, the power unit 2130, the function unit 2140, and thedisplay controller unit 2150 may be mounted on the body 2110. Thedisplay unit 2160 may be disposed inside or outside the body 2110. Forexample, the display unit 2160 may be disposed on the surface of thebody 2110 and display an image processed by the display controller unit2150.

The power unit 2130 may function to receive a predetermined voltage froman external battery (not shown), divide the voltage into requiredvoltage levels, and supply the divided voltages to the MP unit 2120, thefunction unit 2140, and the display controller unit 2150. The MP unit2120 may receive a voltage from the power unit 2130 and control thefunction unit 2140 and the display unit 2160. The function unit 2140 mayserve various functions of the electronic system 2100. For example, whenthe electronic system 2100 is a portable phone, the function unit 2140may include several components capable of serving various functions ofthe portable phone, for example, outputting an image to the display unit2160 or outputting a voice to a speaker, by dialing or communicatingwith an external apparatus 2170. When a camera is also mounted, thefunction unit 2140 may serve as a camera image processor, for example.

In exemplary embodiments in accordance with principles of inventiveconcepts, when the electronic system 2100 is connected to a memory cardto increase capacity, the function unit 2140 may be a memory cardcontroller. The function unit 2140 may transmit/receive signals to/fromthe external apparatus 2170 through a wired or wireless communicationunit 2180. Furthermore, when the electronic system 2100 requires auniversal serial bus (USB) to increase functionality, the function unit2140 may serve as an interface controller. In addition, the functionunit 2140 may include a mass storage device.

A non-volatile memory device in accordance with principles of inventiveconcepts may be applied to the function unit 2140. For example, thefunction unit 2140 may include the substrate 21, the diodes 33, theconductive buffer patterns 39, the lower electrodes 41, the data storageplugs 63, and the upper electrodes 65. The data storage plugs 63 may beelectrically connected to the body 2110. In such a case, the electronicsystem 2100 may exhibit better performance than a system that does notinclude non-volatile memory in accordance with principles of inventiveconcepts, due, at least in part, to the configurations of the diodes 33,the conductive buffer pattern 39, and the electrode structures 41.

According to exemplary embodiments in accordance with principles ofinventive concepts, a conductive buffer pattern vertically aligned witha lower portion of an electrode structure may be provided. Theconductive buffer pattern may be electrically connected to a diode. Theconductive buffer pattern may have a different shape from the diode. Anon-volatile memory device in accordance with principles of inventiveconcepts that employs such a conductive buffer pattern may exhibitimproved ohmic contact between a lower electrode and a switching device,such as a diode, resulting in improved performance, compared to deviceswithout such a conductive buffer pattern.

The foregoing is illustrative of embodiments and is not to be construedas limiting thereof. Although exemplary embodiments have been described,those skilled in the art will readily appreciate that many modificationsare possible without materially departing from the teachings andadvantages of inventive concepts. Accordingly, all such modificationsare intended to be included within the scope of inventive concepts asdefined in the claims. In the claims, means-plus-function clauses areintended to cover the structures described herein as performing therecited function, and not only structural equivalents but alsoequivalent structures.

What is claimed is:
 1. A non-volatile memory device, comprising: avertical diode on a substrate; a conductive buffer pattern on the diode,having a greater planar surface than the diode; an electrode structureon the conductive buffer pattern; and a data storage pattern on theelectrode structure, wherein one lateral surface of the conductivebuffer pattern is vertically aligned with one lateral surface of theelectrode structure.
 2. The device of claim 1, wherein the diode has acylindrical shape, and the conductive buffer pattern has a hexahedralshape.
 3. The device of claim 1, further comprising a molding layer onthe substrate, wherein the diode is formed within a contact holeconfigured to penetrate the molding layer, and the conductive bufferpattern is on the molding layer.
 4. The device of claim 3, wherein abottom end of the conductive buffer pattern extends into the contacthole.
 5. The device of claim 1, wherein the electrode structurecomprises: a lower electrode; a first spacer on a first lateral surfaceof the lower electrode; and a second spacer on a second lateral surfaceof the lower electrode facing the first lateral surface of the lowerelectrode.
 6. The device of claim 5, wherein the lower electrodecomprises: an upper part having a vertical height greater than ahorizontal width; and a lower part having a horizontal width greaterthan a vertical height, wherein the first lateral surface of the lowerelectrode includes a first lateral surface of the upper part, and afirst lateral surface of the lower part, an inner lateral surface of thefirst spacer contacts the first lateral surface of the lower part andthe first lateral surface of the upper part, and an inner lateralsurface of the second spacer contacts a top surface of the lower partand a second lateral surface of the upper part facing the lateralsurface of the upper part.
 7. The device of claim 6, wherein a firstlateral surface of the conductive buffer pattern is vertically alignedwith an outer lateral surface of the second spacer and a second lateralsurface of the lower part facing the first lateral surface of the lowerpart, a second lateral surface of the conductive buffer pattern facingthe first lateral surface of the conductive buffer pattern is verticallyaligned with an outer lateral surface of the first spacer.
 8. The deviceof claim 6, wherein the data storage pattern is interposed between thefirst spacer and the second spacer, lateral surfaces of the data storagepattern are vertically aligned with the first and second lateralsurfaces of the upper part of the lower electrode.
 9. The device ofclaim 1, further comprising: a metal silicide pattern interposed betweenthe diode and the conductive buffer pattern; and an upper electrode onthe data storage pattern.
 10. A non-volatile memory device, comprising:a molding layer on a substrate; a switching device through the moldinglayer; a pair of insulating lines on the molding layer, spaced apart andparallel to one another; a pair of insulating patterns interposedbetween the insulating lines on the molding layer and spaced apart fromone another; a conductive buffer pattern interposed between theinsulating lines and the insulating patterns and configured to overlapthe switching device; an electrode structure on the conductive bufferpattern; and a data storage pattern on the electrode structure, whereinone lateral surface of the conductive buffer pattern is verticallyaligned with one lateral surface of the electrode structure.
 11. Thedevice of claim 10, wherein bottom ends of the insulating lines and theinsulating patterns are formed lower than a top end of the moldinglayer, bottom ends of the insulating lines are formed at a differentlevel from bottom ends of the insulating patterns.
 12. The device ofclaim 11, wherein a top end of the molding layer extends between theinsulating lines and the switching device, and extends between theinsulating patterns and the switching device.
 13. The device of claim11, wherein top ends of the insulating lines, the insulating patterns,and the electrode structure are at substantially the same level.
 14. Thedevice of claim 10, wherein the insulating lines and the insulatingpatterns are in contact with lateral surfaces of the conductive bufferpattern and lateral surfaces of the electrode structure.
 15. The deviceof claim 10, wherein lateral surfaces of the data storage pattern are incontact with the insulating lines.
 16. A non-volatile memory device,comprising: a vertical diode in a contact hole within a molding layeratop a first memory access line; a buffer layer over the diode andmolding layer; a bottom electrode over the buffer layer; a data storagepattern in contact with the bottom electrode on a bottom side and with atop electrode on a top side; and a second memory access line in contactwith the top electrode.
 17. The memory device of claim 16, wherein thebuffer layer includes a plurality of layers.
 18. The memory device ofclaim 15, wherein the buffer layer has a surface area larger than thesurface area of the top surface of the diode.
 19. The memory device ofclaim 15, wherein the data storage pattern includes phase change memorymaterial.
 20. The memory device of claim 19, wherein the phase changememory material is a chalcongenide material.